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 INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SA795
DESCRIPTION *Large Collector Power Dissipation *High Collector-Emitter Breakdown Voltage: V(BR)CEO= -150V(Min) *Good Linearity of hFE *Complement to Type 2SC1565
APPLICATIONS *Medium Power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
-150
V
VCEO
Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-1
A
ICP
Collector Current-Pulse Collector Power Dissipation @ TC=25 Junction Temperature
-1.5
A
PC
10
W
TJ
150
Tstg
Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Vltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product Output Capacitance CONDITIONS IC= -0.1A ; IB= 0 IE= -1mA ; IC= 0 IC= -300mA; IB= -30mA IC= -300mA; IB= -30mA VCB= -100V; IE= 0 VEB= -4V; IC= 0 IC= -150mA ; VCE= -10V IC=-500mA ; VCE= -5V IC= -50mA ; VCE= -10V IE=0 ; VCB= -100V,ftest= 1MHz 65 50 120 MIN -150 -5 TYP.
2SA795
MAX
UNIT V V
-1.5 -1.5 -1 -1 330
V V A A
MHz 15 pF
hFE-1 Classifications P 65-110 Q 90-155 R 130-220 S 185-330
isc Websitewww.iscsemi.cn
2


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