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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA795 DESCRIPTION *Large Collector Power Dissipation *High Collector-Emitter Breakdown Voltage: V(BR)CEO= -150V(Min) *Good Linearity of hFE *Complement to Type 2SC1565 APPLICATIONS *Medium Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25 Junction Temperature -1.5 A PC 10 W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Vltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product Output Capacitance CONDITIONS IC= -0.1A ; IB= 0 IE= -1mA ; IC= 0 IC= -300mA; IB= -30mA IC= -300mA; IB= -30mA VCB= -100V; IE= 0 VEB= -4V; IC= 0 IC= -150mA ; VCE= -10V IC=-500mA ; VCE= -5V IC= -50mA ; VCE= -10V IE=0 ; VCB= -100V,ftest= 1MHz 65 50 120 MIN -150 -5 TYP. 2SA795 MAX UNIT V V -1.5 -1.5 -1 -1 330 V V A A MHz 15 pF hFE-1 Classifications P 65-110 Q 90-155 R 130-220 S 185-330 isc Websitewww.iscsemi.cn 2 |
Price & Availability of 2SA795 |
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